Provided by: magic_7.5.214-1_i386 bug


       sim - format of .sim files read by esim, crystal, etc.


       The   simulation   tools   crystal(1)  and  esim(1)  accept  a  circuit
       description in .sim format.  There is a single .sim file for the entire
       circuit, unlike Magic's ext(5) format in which there is a .ext file for
       every cell in a hierarchical design.

       A .sim file consists of a series of lines, each of which begins with  a
       key  letter.   The  key  letter  beginning  a  line  determines how the
       remainder of the line is interpreted.  The following are  the  list  of
       key letters understood.

       | units: s  tech: tech format: MIT|LBL|SU
              If  present,  this  must be the first line in the .sim file.  It
              identifies the technology of this circuit as tech  and  gives  a
              scale  factor  for  units  of linear dimension as s.  All linear
              dimensions appearing in the .sim file are  multiplied  by  s  to
              give  centimicrons.  The format field signifies the sim variant.
              MIT and SU are compatible and understood by all  tools.  LBL  is
              understood only by gemini(1).

       type  g  s  d  l  w  x  y  g=gattrs  s=sattrs  d=dattrs
              Defines  a transistor of type type.  Currently, type may be e or
              d for NMOS, or p or n for CMOS.  The name of the node  to  which
              the  gate, source, and drain of the transistor are connected are
              given by g, s, and d respectively.  The length and width of  the
              transistor  are  l  and  w.   The  next two tokens, x and y, are
              optional.  If present, they give the location of a point  inside
              the  gate  region  of the transistor.  The last three tokens are
              the attribute lists for the transistor gate, source, and  drain.
              If  no  attributes  are  present  for a particular terminal, the
              corresponding attribute list may be absent (i.e, there may be no
              g=  field  at all).  The attribute lists gattrs, etc. are comma-
              separated lists of labels.  The label names should  not  include
              any  spaces,  although  some  tools  can accept label names with
              spaces if they are enclosed in double quotes.  In version  6.4.5
              and  later the default format produced by ext2sim is SU. In this
              format the attribute  of  the  gate  starting  with  S_  is  the
              substrate  node  of  the  fet.  The  attributes of the gate, and
              source and substrate starting with  A_,  P_  are  the  area  and
              perimeter  (summed  for  that  node only once) of the source and
              drain respectively.  This addition to the  format  is  backwards

       C n1 n2 cap
              Defines  a  capacitor between nodes n1 and n2.  The value of the
              capacitor is cap femtofarads.  NOTE: since many  analysis  tools
              compute   transistor   gate   capacitance  themselves  from  the
              transistor's area and perimeter, the capacitance between a  node
              and  substrate  (GND!) normally does not include the capacitance
              from transistor gates connected to that node.  If the .sim  file
              was  produced  by ext2sim(1), check the technology file that was
              used  to  produce  the  original  .ext  files  to  see   whether
              transistor gate capacitance is included or excluded; see ``Magic
              Maintainer's Manual #2: The Technology File'' for details.

       R node res
              Defines the lumped resistance of node node to be res ohms.  This
              construct is only interpreted by a few programs.

       r node1 node2 res
              Defines  an  explicit  resistor between nodes node1 and node2 of
              resistance res ohms.  This construct is only  interpreted  by  a
              few programs.

       N node darea dperim parea pperim marea mperim
              As  an  alternative  to computed capacitances, some tools expect
              the total perimeter and area of the polysilicon, diffusion,  and
              metal  in  each  node  to  be  reported in the .sim file.  The N
              construct   associates   diffusion   area   darea   (in   square
              centimicrons)  and  diffusion perimeter dperim (in centimicrons)
              with node node, polysilicon area parea and perimeter pperim, and
              metal  area  marea  and  perimeter  mperim.   This  construct is
              technology dependent and obsolete.

       A node attr
              Associates attribute attr for node node.  The string attr should
              contain no blanks.

       = node1 node2
              Each node in a .sim file is named implicitly by having it appear
              in a transistor definition.  All node names appearing in a  .sim
              file  are  assumed to be distinct.  Some tools, such as esim(1),
              recognize aliases for node names.  The =  construct  allows  the
              name  node2  to  be  defined  as  an  alias  for the name node1.
              Aliases defined by  means  of  this  construct  may  not  appear
              anywhere else in the .sim file.


       crystal(1), esim(1), ext2sim(1), sim2spice(1), ext(5)