Provided by: magic_8.2.157+ds.1-1_amd64 bug

NAME

       ext2spice - convert hierarchical ext(5) extracted-circuit files to flat spice files

SYNOPSIS

       ext2spice [ -B ] [ extcheck-options ] [ -M|m ] [ -y num ] [ -f hspice|spice3|spice2 ] [ -J
       hier|flat ] [ -j device:sdRclass[/subRclass]/defaultSubstrate ] root

DESCRIPTION

       Ext2spice will convert an extracted circuit from the  hierarchical  ext(5)  representation
       produced by Magic to a flat spice file which can be accepted by spice2, spice3, hspice and
       other simulation tools.  The root of the tree to be extracted is the file root.ext; it and
       all  the  files  it  references  are  recursively flattened.  The result is a single, flat
       representation of the circuit that is written to the file root.spice .

       The following options are recognized:

       -o outfile
                 Instead of leaving output in the file root.spice, leave it in outfile.

       -B        Don't output transistor or node attributes  in  the  spice  file.   Usually  the
                 attributes  of  a  node or a device are output as special comments **fetattr and
                 **nodeatrr which can be processed  further  to  create  things  such  a  initial
                 conditions etc.

       -F        Don't  output  nodes  that  aren't connected to fets (floating nodes).  Normally
                 capacitance from these nodes is output with the comment **FLOATING  attached  on
                 the same line.

       -tchar    Trim  characters  from  node names when writing the output file.  Char should be
                 either "#" or "!".  The option may be used twice if both characters are desired.
                 Trimming "#" and "!" is enabled by default when the format is hspice.

       -M|m      Merge  parallel  fets.  -m  means  conservative  merging of fets that have equal
                 widths only (useful with hspice format multiplier if delta W effects need to  be
                 taken  care  of).  -M means aggressive merging: the fets are merged if they have
                 the same terminals and the same length.

       -y num    Select the precision for outputting capacitors. The default  is  1  which  means
                 that the capacitors will be printed to a precision of .1 fF.

       -f hspice|spice2|spice3
                 Select  the  output  format.  Spice3  is the the format understood by the latest
                 version of berkeley spice. Node names have the same names as  they  would  in  a
                 sim(5) file and no special constructs are used.  Spice2 is the format understood
                 by the older version of spice (which usually has better convergence). Node names
                 are  numbers  and a dictionary of number and corresponding node is output in the
                 end.  HSPICE  is  a  format  understood  by  meta-software's  hspice  and  other
                 commercial  tools. In this format node names cannot be longer than 15 characters
                 long (blame the fortran code): so if a hierarchical node name is  longer  it  is
                 truncated  to  something  like  x1234/name where x1234 is an alias of the normal
                 node hierarchical prefix and name its hierarchical postfix (a dictionary mapping
                 prefixes  to real hierarchical paths is output at the end of the spice file). If
                 the node name is still longer than 15 characters long (again blame  the  fortran
                 code)  it  is  translated  to  something  like z@1234 and the equivalent name is
                 output as a comment. In addition since hspice supports scaling  and  multipliers
                 so  the  output  dimensions  are  in lambdas and if parallel fets are merged the
                 hspice construct M is used.

       -J hier|flat
                 Select the source/drain area and perimeter  extraction  algorithm.  If  hier  is
                 selected  then  the areas and perimeters are extracted only within each subcell.
                 For each fet in a subcell the area and perimeter of its source and drain  within
                 this subcell are output.  If two or more fets share a source/drain node then the
                 total area and perimeter will be output in only one of them and the  other  will
                 have  0.  If flat is selected the same rules apply only that the scope of search
                 for area and perimeter is the whole netlist.  In  general  flat  (which  is  the
                 default)   will  give  accurate  results  (it  will  take  into  account  shared
                 sources/drains) but hier is provided for backwards  compatibility  with  version
                 6.4.5. On top of this selection you can individually control how a terminal of a
                 specific fet will be extracted if you  put  a  source/drain  attribute.  ext:aph
                 makes  the  extraction for that specific terminal hierarchical and ext:apf makes
                 the extraction flat (see the magic tutorial about attaching  attribute  labels).
                 Additionally  to  ease  extraction  of  bipolar  transistors  the gate attribute
                 ext:aps forces the output of the substrate area and perimeter for a specific fet
                 (in flat mode only).

       -j device:sdRclass[/subRclass]/defaultSubstrate
                 Gives  ext2sim  information  about  the source/drain resistance class of the fet
                 type device. Makes device  to  have  sdRclass  source  drain  resistance  class,
                 subRclass  substrate (well) resistance class and the node named defaultSubstrate
                 as its default substrate.  The defaults are nfet:0/Gnd  and  pfet:1/6/Vdd  which
                 correspond  to the MOSIS technology file but things might vary in your site. Ask
                 your local cad administrator.

       The way the extraction of node area and perimeter  works  in  magic  the  total  area  and
       perimeter of the source/drain junction is summed up on a single node.  That is why all the
       junction areas and perimeters are summed up on a  single  node  (this  should  not  affect
       simulation results however).

       Special  care  must  be taken when the substrate of a fet is tied to a node other than the
       default substrate (eg in a bootstraping charge pump).  To get the correct  substrate  info
       in these cases the fet(s) with separate wells should be in their own separate subcell with
       ext:aph attributes attached to their sensitive terminals (also all the  transistors  which
       share  sensitive  terminals  with  these  should  be  in  another  subcell  with  the same
       attributes).

       In addition, all of the options of extcheck(1) are accepted.

       The awk filter spice2sim is provided with the current distribution for debugging purposes.

SEE ALSO

       extcheck(1), ext2spice(1), magic(1), rsim(1), ext(5), sim(5)

AUTHOR

       Stefanos Sidiropoulos.

BUGS

       The areas and perimeters of fet sources and drains work only with  the  simple  extraction
       algorithm  and  not with the extresis flow. So you have to model them as linear capacitors
       (create a special extraction style) if you want  to  extract  parasitic  resistances  with
       extresis.