Provided by: magic_8.2.157+ds.1-1_amd64 bug

NAME

       ext2spice - convert hierarchical ext(5) extracted-circuit files to flat spice files

SYNOPSIS

       ext2spice  [ -B ] [ extcheck-options ] [ -M|m ] [ -y num ] [ -f hspice|spice3|spice2 ] [ -J hier|flat ] [
       -j device:sdRclass[/subRclass]/defaultSubstrate ] root

DESCRIPTION

       Ext2spice will convert an extracted circuit from the hierarchical ext(5) representation produced by Magic
       to  a  flat  spice  file which can be accepted by spice2, spice3, hspice and other simulation tools.  The
       root of the tree to be extracted is the file root.ext; it and all the files it references are recursively
       flattened.   The  result  is  a  single,  flat  representation of the circuit that is written to the file
       root.spice .

       The following options are recognized:

       -o outfile
                 Instead of leaving output in the file root.spice, leave it in outfile.

       -B        Don't output transistor or node attributes in the spice file.  Usually the attributes of a node
                 or  a  device  are  output  as special comments **fetattr and **nodeatrr which can be processed
                 further to create things such a initial conditions etc.

       -F        Don't output nodes that aren't connected to fets (floating nodes).  Normally  capacitance  from
                 these nodes is output with the comment **FLOATING attached on the same line.

       -tchar    Trim  characters  from  node  names when writing the output file.  Char should be either "#" or
                 "!".  The option may be used twice if both characters are desired.  Trimming  "#"  and  "!"  is
                 enabled by default when the format is hspice.

       -M|m      Merge  parallel fets. -m means conservative merging of fets that have equal widths only (useful
                 with hspice format multiplier if delta W effects need to be taken care of). -M means aggressive
                 merging: the fets are merged if they have the same terminals and the same length.

       -y num    Select  the  precision  for  outputting  capacitors.  The  default  is  1  which means that the
                 capacitors will be printed to a precision of .1 fF.

       -f hspice|spice2|spice3
                 Select the output format. Spice3 is the the format understood by the latest version of berkeley
                 spice.  Node names have the same names as they would in a sim(5) file and no special constructs
                 are used.  Spice2 is the format understood by the older version of  spice  (which  usually  has
                 better  convergence).  Node names are numbers and a dictionary of number and corresponding node
                 is output in the end.  HSPICE is a  format  understood  by  meta-software's  hspice  and  other
                 commercial tools. In this format node names cannot be longer than 15 characters long (blame the
                 fortran code): so if a hierarchical node name is longer  it  is  truncated  to  something  like
                 x1234/name  where  x1234  is  an  alias  of  the  normal  node hierarchical prefix and name its
                 hierarchical postfix (a dictionary mapping prefixes to real hierarchical paths is output at the
                 end  of  the spice file). If the node name is still longer than 15 characters long (again blame
                 the fortran code) it is translated to something like z@1234 and the equivalent name  is  output
                 as  a  comment.  In  addition  since  hspice  supports  scaling  and  multipliers so the output
                 dimensions are in lambdas and if parallel fets are merged the hspice construct M is used.

       -J hier|flat
                 Select the source/drain area and perimeter extraction algorithm. If hier is selected  then  the
                 areas and perimeters are extracted only within each subcell. For each fet in a subcell the area
                 and perimeter of its source and drain within this subcell are output.   If  two  or  more  fets
                 share  a source/drain node then the total area and perimeter will be output in only one of them
                 and the other will have 0.  If flat is selected the same rules apply only  that  the  scope  of
                 search for area and perimeter is the whole netlist. In general flat (which is the default) will
                 give accurate results (it will take into account shared sources/drains) but  hier  is  provided
                 for  backwards  compatibility with version 6.4.5. On top of this selection you can individually
                 control how a terminal of a specific fet will be extracted if you put a source/drain attribute.
                 ext:aph  makes  the  extraction  for  that specific terminal hierarchical and ext:apf makes the
                 extraction flat (see the magic tutorial about attaching  attribute  labels).   Additionally  to
                 ease  extraction  of  bipolar  transistors  the gate attribute ext:aps forces the output of the
                 substrate area and perimeter for a specific fet (in flat mode only).

       -j device:sdRclass[/subRclass]/defaultSubstrate
                 Gives ext2sim information about the source/drain resistance class of the fet type device. Makes
                 device  to  have  sdRclass source drain resistance class, subRclass substrate (well) resistance
                 class and the  node  named  defaultSubstrate  as  its  default  substrate.   The  defaults  are
                 nfet:0/Gnd and pfet:1/6/Vdd which correspond to the MOSIS technology file but things might vary
                 in your site. Ask your local cad administrator.

       The way the extraction of node area and perimeter works in magic the total  area  and  perimeter  of  the
       source/drain  junction  is summed up on a single node.  That is why all the junction areas and perimeters
       are summed up on a single node (this should not affect simulation results however).

       Special care must be taken when the substrate of a fet is tied to a node other than the default substrate
       (eg  in  a  bootstraping  charge pump).  To get the correct substrate info in these cases the fet(s) with
       separate wells should be in their  own  separate  subcell  with  ext:aph  attributes  attached  to  their
       sensitive  terminals  (also  all  the transistors which share sensitive terminals with these should be in
       another subcell with the same attributes).

       In addition, all of the options of extcheck(1) are accepted.

       The awk filter spice2sim is provided with the current distribution for debugging purposes.

SEE ALSO

       extcheck(1), ext2spice(1), magic(1), rsim(1), ext(5), sim(5)

AUTHOR

       Stefanos Sidiropoulos.

BUGS

       The areas and perimeters of fet sources and drains work only with the simple extraction algorithm and not
       with  the  extresis  flow.  So  you  have to model them as linear capacitors (create a special extraction
       style) if you want to extract parasitic resistances with extresis.